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AOD4187 PDF预览

AOD4187

更新时间: 2024-11-05 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 146K
描述
P-Channel Enhancement Mode Field Effect Transistor

AOD4187 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Base Number Matches:1

AOD4187 数据手册

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AOD4187  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD4187 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge.  
With the excellent thermal resistance of the DPAK  
package, this device is well suited for high current load  
applications  
VDS (V) = -40V  
ID = -45A  
(VGS = -10V)  
(VGS = -10V)  
(VGS = -4.5V)  
RDS(ON) < 17m  
RDS(ON) < 23mΩ  
-RoHS Compliant  
-Halogen Free*  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
D
Bottom View  
Top View  
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-40  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
-45  
TC=25°C  
Continuous Drain  
Current G  
Pulsed Drain Current C  
TC=100°C  
ID  
-30  
A
IDM  
-100  
-9  
TC=25°C  
Continuous Drain  
Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
TC=100°C  
IDSM  
IAR  
-7  
-36  
A
EAR  
65  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
60  
PD  
W
30  
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
41  
2
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
50  
2.5  
RθJC  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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