Datasheet > AOD4187

AOD4187

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	146K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD4187 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AOD4187 数据手册

AOD4187

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4187 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge.

With the excellent thermal resistance of the DPAK

package, this device is well suited for high current load

applications

V_DS(V) = -40V

I_D= -45A

(V_GS= -10V)

(V_GS= -4.5V)

R_DS(ON)< 17mΩ

R_DS(ON)< 23mΩ

-RoHS Compliant

-Halogen Free*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-40

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

-45

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

T_C=100°C

I_D

-30

I_DM

-100

-9

T_C=25°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

T_C=100°C

I_DSM

I_AR

-7

-36

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

2.5

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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与AOD4187相关器件

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