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AOD4185

更新时间: 2024-09-15 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管脉冲PC
页数 文件大小 规格书
6页 154K
描述
P-Channel Enhancement Mode Field Effect Transistor

AOD4185 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.7
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:784861Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:TO252 DPAK_1Samacsys Released Date:2019-03-13 10:14:47
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):62.5 W
最大脉冲漏极电流 (IDM):115 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

AOD4185 数据手册

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AOD4185  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD4185 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. With the  
excellent thermal resistance of the DPAK package, this  
device is well suited for high current applications.  
VDS (V) = -40V  
ID = -40A  
(VGS = -10V)  
RDS(ON) < 15m(VGS = -10V)  
RDS(ON) < 20m(VGS = -4.5V)  
-RoHS Compliant  
-Halogen Free*  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
D
Bottom View  
Top View  
D
G
G
S
S
S
G
Absolute Maximum Ratings TC=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-40  
V
Gate-Source Voltage  
Continuous Drain  
Current B,H  
Pulsed Drain Current C  
Avalanche Current C  
VGS  
±20  
-40  
V
TC=25°C  
TC=100°C  
ID  
-31  
A
IDM  
IAR  
EAR  
-115  
-42  
Repetitive avalanche energy L=0.1mH C  
88  
mJ  
W
°C  
TC=25°C  
62.5  
31  
PD  
Power Dissipation B  
TC=100°C  
TA=25°C  
2.5  
PDSM  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
41  
2
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
t 10s  
RθJA  
Maximum Junction-to-Ambient A,G  
Maximum Junction-to-Case D,F  
Steady-State  
Steady-State  
50  
RθJC  
2.4  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

AOD4185 替代型号

型号 品牌 替代类型 描述 数据表
SUD50P04-08-GE3 VISHAY

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