是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 1.7 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 784861 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | MOSFET (P-Channel) | Samacsys Package Category: | Other |
Samacsys Footprint Name: | TO252 DPAK_1 | Samacsys Released Date: | 2019-03-13 10:14:47 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 50 A | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.015 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 62.5 W |
最大脉冲漏极电流 (IDM): | 115 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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