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AOD4185 PDF预览

AOD4185

更新时间: 2024-11-19 17:15:31
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
7页 588K
描述
种类:P-Channel;漏源电压(Vdss):-40V;持续漏极电流(Id)(在25°C时):-40A;Vgs(th)(V):±20;漏源导通电阻:15mΩ@-10V

AOD4185 数据手册

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R
UMW  
AOD4185  
P-Channel MOSFET  
Features  
VDS (V) =-40V  
ID = -40A  
RDS(ON) 15mΩ (VGS =-10V)  
RDS(ON) 20mΩ (VGS =-4.5V)  
General Description  
The AOD4185 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. With the  
excellent thermal resistance of the DPAK/IPAK  
package, this device is well suited for high current  
applications.  
D
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted  
P
P
a
a
r
r
a
a
m
m
e
e
t
t
e
e
r
r
S
S
y
y
m
m
b
b
o
o
l
l
M
M
a
a
x
x
i
i
m
m
u
u
m
m
Units  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current B,H  
Pulsed Drain Current C  
Avalanche Current C  
VDS  
VGS  
-40  
±20  
-40  
-31  
V
V
TC=25°C  
TC=100°C  
ID  
A
IDM  
IAR  
EAR  
-115  
-42  
88  
Repetitive avalanche energy L=0.1mH C  
mJ  
W
TC=25°C  
62.5  
31  
PD  
Power Dissipation B  
TC=100°C  
TA=25°C  
2.5  
1.6  
PDSM  
TJ, TSTG  
Power Dissipation A  
TA=70°C  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
41  
2
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
t 10s  
20  
50  
2.4  
RθJA  
Maximum Junction-to-Ambient A,G  
Maximum Junction-to-Case D,F  
Steady-State  
Steady-State  
RθJC  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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