Datasheet > AOD4185

AOD4185

更新时间： 2024-11-06 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	588K
描述
种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C时）:-40A;Vgs(th)(V):±20;漏源导通电阻:15mΩ@-10V

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AOD4185 数据手册

UMW

AOD4185

P-Channel MOSFET

Features

● VDS (V) =-40V

● ID = -40A

● RDS(ON) ＜ 15mΩ (VGS =-10V)

● RDS(ON) ＜ 20mΩ (VGS =-4.5V)

General Description

The AOD4185 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. With the

excellent thermal resistance of the DPAK/IPAK

package, this device is well suited for high current

applications.

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^C

Avalanche Current ^C

V_DS

V_GS

-40

±20

-40

-31

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

-115

-42

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

62.5

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

1.6

P_DSM

T_J, T_STG

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

2.4

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^D,F

Steady-State

R_θJC

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