Datasheet > AOD4182

AOD4182

更新时间： 2024-11-20 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	543K
描述
80V N-Channel MOSFET

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AOD4182 数据手册

AOD4182

80V N-Channel MOSFET

General Description

The AOD4182 is fabricated with SDMOS^TMtrench technology that combines excellent R_DS(ON)with low gate

charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

general purpose applications.

technology is well suited for PWM, load switching and

Features

V_DS

80V

I_D(at V_GS=10V)

53A

< 15.5mΩ

R_DS(ON)(at V_GS=10V)

< 20mΩ

R_DS(ON)(at V_GS=7V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

±25

Gate-Source Voltage

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

T_A=25°C

T_A=70°C

8.5

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

6.8

I_AS, I_AR

E_AS, E_AR

101

100

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.5

P_DSM

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

1/7

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