是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 61 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.008 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AOD4184_09 | AOS |
获取价格 |
40V N-Channel MOSFET | |
AOD4184A | FREESCALE |
获取价格 |
40V N-Channel MOSFET | |
AOD4184A | AOS |
获取价格 |
40V N-Channel MOSFET | |
AOD4184L | AOS |
获取价格 |
Plastic Encapsulated Device | |
AOD4185 | AOS |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor | |
AOD4185 | UMW |
获取价格 |
种类:P-Channel;漏源电压(Vdss):-40V;持续漏极电流(Id)(在25°C | |
AOD4185_12 | AOS |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor | |
AOD4185L | AOS |
获取价格 |
暂无描述 | |
AOD4186 | FREESCALE |
获取价格 |
N-Channel Enhancement Mode Field | |
AOD4186 | AOS |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor |