Datasheet > AOD417_08

AOD417_08

更新时间： 2024-11-18 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	144K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AOD417_08 数据手册

AOD417

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD417 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications.

V_DS(V) = -30V

I_D= -25A

(V_GS= -10V)

R_DS(ON)< 34mΩ (V_GS= -10V)

_DS(ON)< 55mΩ (V_GS= -4.5V)

-RoHS Compliant

-Halogen Free*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±20

-25

T_A=25°C

Continuous Drain

Current ^B,G

T_A=100°C

I_D

-20

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

-60

-14

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^D

R_θJC

2.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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