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STW65N80K5 PDF预览

STW65N80K5

更新时间: 2024-11-29 14:58:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 707K
描述
N沟道800 V、0.07 Ohm典型值、46 A MDmesh K5功率MOSFET,TO-247封装

STW65N80K5 数据手册

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STW65N80K5  
N-channel 800 V, 0.07 Ω typ., 46 A MDmesh™ K5  
Power MOSFET in a TO-247 package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
PTOT  
STW65N80K5 800 V  
0.08 Ω  
46 A 446 W  
Industry’s lowest RDS(on) x area  
Industry’s best figure of merit (FoM)  
Ultra low gate charge  
100% avalanche tested  
Zener-protected  
3
2
1
TO-247  
Applications  
Switching applications  
Figure 1: Internal schematic diagram  
Description  
This very high voltage N-channel Power  
MOSFET is designed using MDmesh™ K5  
technology based on an innovative proprietary  
vertical structure. The result is a dramatic  
reduction in on-resistance and ultra-low gate  
charge for applications requiring superior power  
density and high efficiency.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STW65N80K5  
65N80K5  
TO-247  
Tube  
October 2015  
DocID027717 Rev 2  
1/12  
www.st.com  
This is information on a product in full production.  

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