Datasheet > STW72N60DM6AG

STW72N60DM6AG

更新时间： 2024-11-29 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	278K
描述
Automotive-grade N-channel 600 V, 37 mOhm typ., 56 A MDmesh DM6 Power MOSFET in a TO-247 package

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STW72N60DM6AG 数据手册

STW72N60DM6AG

Datasheet

Automotive-grade N-channel 600 V, 37 mΩ typ., 56 A, MDmesh DM6

Power MOSFET in a TO‑247 package

Features

Order code

DS(on) max.

STW72N60DM6AG

600 V

42 mΩ

56 A

•

AEC-Q101 qualified

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

TO-247

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status links

STW72N60DM6AG

Product summary

Order code

Marking

STW72N60DM6AG

72N60DM6

TO-247

Package

Packing

Tube

DS13001 - Rev 2 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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