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STW77N65M5 PDF预览

STW77N65M5

更新时间: 2024-11-24 12:26:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 963K
描述
N-channel 650 V, 0.033 ohm, 69 A, MDmesh V Power MOSFET TO-247

STW77N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:2.26
雪崩能效等级(Eas):2000 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):69 A
最大漏极电流 (ID):69 A最大漏源导通电阻:0.038 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
最大脉冲漏极电流 (IDM):276 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW77N65M5 数据手册

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STW77N65M5  
N-channel 650 V, 0.033 , 69 A, MDmesh™ V Power MOSFET  
TO-247  
Features  
VDSS  
@Tjmax.  
Order code  
RDS(on) max.  
ID  
STW77N65M5  
710 V  
< 0.038 Ω  
69 A  
Higher V  
rating  
DSS  
Higher dv/dt capability  
3
2
Excellent switching performance  
Easy to drive  
1
TO-247  
100% avalanche tested  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆꢇ  
This device is a N-channel MDmesh™ V Power  
MOSFET based on an innovative proprietary  
vertical process technology, which is combined  
with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢇ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Order code  
STW77N65M5  
Device summary  
Marking  
Package  
TO-247  
Packaging  
77N65M5  
Tube  
February 2011  
Doc ID 15322 Rev 3  
1/14  
www.st.com  
14  

STW77N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STW70N60M2 STMICROELECTRONICS

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N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET,

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