Datasheet > STW70N60M2

STW70N60M2

更新时间： 2023-12-20 18:44:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	1022K
描述
N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET，TO-247封装

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STW70N60M2 数据手册

STW70N60M2

N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2

Power MOSFET in a TO-247 package

Datasheet

−

production data

Features

Order codes

V_DS@ T_JmaxR_DS(on)max

650 V 0.040 Ω

I_D

STW70N60M2

68 A

•

Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

TO-247

Zener-protected

Applications

Figure 1. Internal schematic diagram

• Switching applications

D(2)

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics, rendering

it suitable for the most demanding high efficiency

converters.

G(1)

S(3)

AM01476v1

Table 1. Device summary

Order codes

Marking

70N60M2

Package

Packaging

STW70N60M2

TO-247

Tube

September 2014

DocID024327 Rev 4

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

中文翻译

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