Datasheet > STW72N60DM2AG

STW72N60DM2AG

更新时间： 2024-11-30 14:58:15

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意法半导体 - STMICROELECTRONICS		/
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描述
汽车级N沟道600 V、37 mOhm典型值、66 A MDmesh DM2功率MOSFET，TO-247封装

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中文翻译

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技术参数
数据手册

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STW72N60DM2AG 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	2.11	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STW72N60DM2AG 数据手册

STW72N60DM2AG

Automotive-grade N-channel 600 V, 0.037 Ω typ., 66 A

MDmesh™ DM2 Power MOSFET in a TO-247 package

Datasheet - production data

Features

R_DS(on)

Order code

V_DS

I_D

P_TOT

max.

STW72N60DM2AG 600 V 0.042 Ω 66 A 446 W



AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input

capacitance



Low on-resistance

TO-247

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications

D(2, TAB)



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

G(1)

S(3)

AM01476v1_tab

Table 1: Device summary

Marking

Order code

Package

Packing

STW72N60DM2AG

72N60DM2

TO-247

Tube

October 2016

DocID027314 Rev 5

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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