STW7NA80FI

更新时间： 2024-11-19 21:53:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	125K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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中文翻译

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数据手册

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STW7NA80FI 数据手册

STW7NA80

STH7NA80FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STW7NA80

STH7NA80FI

800 V

< 1.9 Ω

6.5 A

4 A

■

TYPICAL R_DS(on)= 1.68 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

TO-247

ISOWATT218

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STW7NA80 STH7NA80FI

Unit

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

800

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

6.5

2.5

I_D

_DM(• )

P_tot

Total Dissipation at T_c= 25 C

150

1.2

Derating Factor

0.48

4000

W/^oC

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

^oC

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

October 1998

12 3 4 5 6 7...10

中文翻译

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