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STW80NF10 PDF预览

STW80NF10

更新时间: 2024-11-23 22:18:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS
页数 文件大小 规格书
8页 254K
描述
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET⑩ POWER MOSFET

STW80NF10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.8
雪崩能效等级(Eas):245 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.015 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW80NF10 数据手册

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STW80NF10  
N-CHANNEL 100V - 0.012- 80A TO-247  
LOW GATE CHARGE STripFET™ POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STW80NF10  
100 V  
< 0.015 Ω  
80 A  
TYPICAL R (on) = 0.012Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
2
1
TO-247  
DESCRIPTION  
This Power Mosfet series realized with STMicro-  
electronics unique STripFET process has specifical-  
ly been designed to minimize input capacitance and  
gate charge. It is therefore suitable as primary  
switch in advanced high-efficiency isolated DC-DC  
converters for Telecom and Computer application. It  
is also intended for any application with low gate  
charge drive requirements.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH-EFFICIENCY DC-DC CONVERTERS  
UPS AND MOTOR CONTROL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
100  
100  
±20  
80  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I (*)  
D
Drain Current (continuos) at T = 25°C  
A
C
I
Drain Current (continuos) at T = 100°C  
50  
A
D
C
I
()  
Drain Current (pulsed)  
320  
300  
2
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
mJ  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
9
E
(2)  
245  
–65 to 175  
175  
AS  
T
stg  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
(*) Limited by wire bonding  
(1) I 80A, di/dt 300A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
(2) Starting T = 25°C, I = 80A, V = 50V  
j
D
DD  
April 2001  
1/8  

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