Datasheet > STW7N90K5

STW7N90K5

更新时间： 2024-11-21 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	269K
描述
N沟道900 V、0.72 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

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STW7N90K5 数据手册

STW7N90K5

Datasheet

N-channel 900 V, 0.72 Ω typ., 7 A MDmesh™ K5 Power MOSFET in a TO-247

package

Features

Order code

max.

DS(on )

STW7N90K5

900 V

0.81 Ω

7 A

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

TO-247

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

S(3)

AM01475V1

Product status

STW7N90K5

Device summary

Order code

Marking

STW7N90K5

7N90K5

TO-247

Package

Packing

Tube

DS11871 - Rev 2 - February 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

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