Datasheet > STW70N65M2

STW70N65M2

更新时间： 2023-12-20 18:44:26

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道650 V、0.039 Ohm典型值、63 A MDmesh M2功率MOSFET，TO-247封装

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STW70N65M2 数据手册

STW70N65M2

N-channel 650 V, 0.039 Ω typ., 63 A MDmesh™ M2

Power MOSFET in a TO-247 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STW70N65M2

650 V

0.046 Ω

63 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

Applications

TO-247



Switching applications

Description

Figure 1: Internal schematic diagram

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

D(2)

G(1)

S(3)

AM15572v1_no_tab

Table 1: Device summary

Order code

Marking

Package

Packaging

STW70N65M2

70N65M2

TO-247

Tube

February 2016

DocID028962 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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