Datasheet > STW70N60M2-4

STW70N60M2-4

更新时间： 2023-12-20 18:45:16

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	721K
描述
N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET，TO247-4封装

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STW70N60M2-4 数据手册

STW70N60M2-4

N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2

Power MOSFET in a TO247-4 package

Datasheet - production data

Features

Order code

V_DS@ T_JmaxR_DS(on)max

650 V 0.040 Ω

I_D

STW70N60M2-4

68 A



Excellent switching performance thanks to

the extra driving source pin

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested



Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packaging

STW70N60M2-4

70N60M2

TO247-4

Tube

September 2016

DocID029658 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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