Datasheet > STW69N65M5

STW69N65M5

更新时间： 2024-11-29 14:57:59

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	666K
描述
N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET，TO-247封装

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STW69N65M5 数据手册

STFW69N65M5

STW69N65M5

N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET

in TO-3PF and TO-247 packages

Datasheet −production data

Features

Order codes V_DSS@ T_JmaxR_DS(on)max I_D

STFW69N65M5

710 V

< 0.045 Ω 58 A

STW69N65M5

■ Worldwide best R_DS(on)* area

■ Higher V_DSSrating and high dv/dt capability

■ Excellent switching performance

■ 100% avalanche tested

TO-247

TO-3PF

Applications

■ Switching applications

Figure 1.

Internal schematic diagram

Description

$ꢅꢆꢇ

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

'ꢅꢁꢇ

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

3ꢅꢈꢇ

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Package

Packaging

Tube

STFW69N65M5

STW69N65M5

TO-3PF

TO-247

69N65M5

September 2012

Doc ID 022906 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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