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STW6NA90 PDF预览

STW6NA90

更新时间: 2024-11-27 22:14:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 76K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STW6NA90 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.32
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):600 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:1.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW6NA90 数据手册

 浏览型号STW6NA90的Datasheet PDF文件第2页浏览型号STW6NA90的Datasheet PDF文件第3页浏览型号STW6NA90的Datasheet PDF文件第4页浏览型号STW6NA90的Datasheet PDF文件第5页 
STW6NA90  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 1.9 Ω  
ID  
STW6NA90  
900 V  
6 A  
TYPICAL RDS(on) = 1.45 Ω  
± 30V GATE TO SOURCE VOLTAGE  
RANTING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCE  
GATE CHARGE MINIMIZED  
3
2
1
REDUCED VOLTAGE SPREAD  
APPLICATIONS  
TO-247  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
CONSUMER AND INDUSTRIAL LIGHTING  
DC-AC CONVERTER FOR WELDING  
EQUIPMENT AND UNINTERRUPTABLE  
POWER SUPPLY (UPS)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
900  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
900  
± 30  
6
V
o
ID  
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
3.8  
A
IDM()  
Ptot  
Drain Current (pulsed)  
24  
A
o
Total Dissipation at Tc = 25 C  
160  
W
Derating Factor  
1.28  
-65 to 150  
150  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/5  
January 1998  

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