Datasheet > STW70N60DM6-4

STW70N60DM6-4

更新时间： 2024-11-29 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	253K
描述
N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET，TO247-4封装

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STW70N60DM6-4 数据手册

STW70N60DM6-4

Datasheet

N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFET

in a TO247-4 package

Features

max.

Order code

DS(on)

STW70N60DM6-4

600 V

42 mΩ

62 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

TO247-4

Drain(1, TAB)

Extremely high dv/dt ruggedness

Zener-protected

Excellent switching performance thanks to the extra driving source pin

Gate(4)

Applications

Driver

source (3)

•

Switching applications

Power

source (2)

AM10177v2Z

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STW70N60DM6-4

Product summary

Order code

Marking

STW70N60DM6-4

70N60DM6

TO247-4

Package

Packing

Tube

DS12995 - Rev 3 - March 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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