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STW70N60DM6 PDF预览

STW70N60DM6

更新时间: 2024-11-29 14:57:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 344K
描述
N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET,TO-247封装

STW70N60DM6 数据手册

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STW70N60DM6, STWA70N60DM6  
Datasheet  
N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs  
in TO247 and TO247 long leads packages  
Features  
V
R
max.  
I
D
Order code  
STW70N60DM6  
STWA70N60DM6  
DS  
DS(on)  
600 V  
42 mΩ  
62 A  
3
2
3
1
2
1
Fast-recovery body diode  
Lower RDS(on) per area vs previous generation  
TO-247 long leads  
TO-247  
Low gate charge, input capacitance and resistance  
100% avalanche tested  
D(2, TAB)  
Extremely high dv/dt ruggedness  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
Description  
AM01476v1_tab  
These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6  
fast-recovery diode series. Compared with the previous MDmesh fast generation,  
DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent  
improvement in RDS(on) per area with one of the most effective switching behaviors  
available in the market for the most demanding high-efficiency bridge topologies and  
ZVS phase-shift converters.  
Product status links  
STW70N60DM6, STWA70N60DM6  
Product summary  
STW70N60DM6  
Order code  
Marking  
STW70N60DM6  
70N60DM6  
TO-247  
Package  
Packing  
Tube  
STWA70N60DM6  
Order code  
Marking  
STWA70N60DM6  
70N60DM6  
Package  
Packing  
TO-247 long leads  
Tube  
DS12274 - Rev 5 - February 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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