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STW69N65M5 PDF预览

STW69N65M5

更新时间: 2023-12-20 18:45:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 666K
描述
N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET,TO-247封装

STW69N65M5 数据手册

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STFW69N65M5, STW69N65M5  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
TO-3PF  
TO-247  
VGS  
ID  
Gate-source voltage  
25  
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
58(1)  
36.5 (1)  
232 (1)  
79  
58  
A
A
ID  
36.5  
232  
330  
(2)  
IDM  
A
PTOT  
Total dissipation at TC = 25 °C  
W
dv/dt (3) Peak diode recovery voltage slope  
15  
V/ns  
Insulation withstand voltage (RMS) from all  
VISO  
three leads to external heat sink  
(t=1s; Tc=25°C)  
3500  
V
Tstg  
Tj  
Storage temperature  
- 55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited by maximum junction temperature.  
2. Pulse width limited by safe operating area  
3.  
I
58 A, di/dt 400 A/µs; V  
< V  
V
=400 V  
SD  
DS peak  
(BR)DSS, DD  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
TO-3PF  
TO-247  
Rthj-case Thermal resistance junction-case max  
Rthj-amb Thermal resistance junction-ambient max  
1.58  
0.38  
°C/W  
°C/W  
50  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Value  
Unit  
Avalanche current, repetetive or not repetetive  
IAR  
12  
A
(pulse width limited by Tjmax  
)
Single pulse avalanche energy (starting tj=25°C,  
Id= IAR; Vdd=50)  
EAS  
1410  
mJ  
Doc ID 022906 Rev 2  
3/16  
 
 
 

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