Datasheet > STW69N65M5

STW69N65M5

更新时间： 2023-12-20 18:45:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	666K
描述
N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET，TO-247封装

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中文翻译

获取价格

数据手册

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STW69N65M5 数据手册

STFW69N65M5, STW69N65M5

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

TO-3PF

TO-247

V_GS

I_D

Gate-source voltage

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

58⁽¹⁾

36.5 ⁽¹⁾

232 ⁽¹⁾

I_D

36.5

232

330

(2)

I_DM

P_TOT

Total dissipation at T_C= 25 °C

dv/dt ⁽³⁾Peak diode recovery voltage slope

V/ns

Insulation withstand voltage (RMS) from all

V_ISO

three leads to external heat sink

(t=1s; Tc=25°C)

3500

T_stg

T_j

Storage temperature

- 55 to 150

150

°C

Max. operating junction temperature

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area

≤ 58 A, di/dt ≤400 A/µs; V

< V

=400 V

DS peak

(BR)DSS, DD

Table 3.

Symbol

Thermal data

Parameter

Value

Unit

TO-3PF

TO-247

R_thj-caseThermal resistance junction-case max

R_thj-ambThermal resistance junction-ambient max

1.58

0.38

°C/W

Table 4.

Symbol

Avalanche characteristics

Parameter

Value

Unit

Avalanche current, repetetive or not repetetive

I_AR

(pulse width limited by T_jmax

)

Single pulse avalanche energy (starting t_j=25°C,

I_d= I_AR; V_dd=50)

E_AS

1410

Doc ID 022906 Rev 2

3/16

1 234 5 6 7...16

中文翻译

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