Datasheet > STW69N65M5-4

STW69N65M5-4

更新时间： 2024-11-29 14:58:27

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET，TO247-4封装

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STW69N65M5-4 数据手册

STW69N65M5-4

N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET

in a TO247-4 package

Datasheet

production data

Features

R_DS(on)

max

Order code

V_DS@ T_Jmax

I_D

58 A

STW69N65M5-4

710 V

0.045 Ω

• Higher V_DSrating

• Higher dv/dt capability

• Excellent switching performance thanks to the

extra driving source pin

TO247-4

• Easy to drive

• 100% avalanche tested

Figure 1. Internal schematic diagram

Applications

Drain(1)

• High efficiency switching applications:

– Servers

– PV inverters

– Telecom infrastructure

– Multi kW battery chargers

Gate(4)

Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

Driver

source(3)

Power

source(2)

AM10177v1

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Table 1. Device summary

Order code

STW69N65M5-4

Marking

69N65M5

Package

Packaging

TO247-4

Tube

January 2014

DocID024925 Rev 2

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

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