Datasheet > STW68N65DM6

STW68N65DM6

更新时间： 2024-11-29 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	258K
描述
N沟道650 V、0.050 Ohm典型值、58A MDmesh DM6功率MOSFET，TO-247封装

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STW68N65DM6 数据手册

STW68N65DM6

Datasheet

N-channel 650 V, 51 mΩ typ., 55 A MDmesh DM6 Power MOSFET

in a TO-247 package

Features

Order code

DS(on) max

STW68N65DM6

650 V

59 mΩ

55 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

TO-247

Extremely high dv/dt ruggedness

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

AM01476v1_tab

Product status link

STW68N65DM6

Product summary

Order code

Marking

STW68N65DM6

68N65DM6

TO-247

Package

Packing

Tube

DS13331 - Rev 3 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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