Datasheet > STW68N60M6-4

STW68N60M6-4

更新时间： 2023-12-20 18:45:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	276K
描述
N沟道600 V、35 mOhm典型值、63 A MDmesh M6功率MOSFET，TO247-4封装

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STW68N60M6-4 数据手册

STW68N60M6-4

Datasheet

N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET in TO247-4

package

Features

DS(on)

max.

Order code

STW68N60M6-4

600 V

41 mΩ

63 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO247-4

Drain(1)

Zener-protected

Excellent switching performance thanks to the extra driving source pin

Applications

Gate(4)

•

Switching applications

LLC converters

Driver

source (3)

Boost PFC converters

Power

source (2)

AM10177v2Z

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to

the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its

new M6 technology, which combines excellent R_DS(on)per area improvement with

one of the most effective switching behaviors available, as well as a user-friendly

experience for maximum end-application efficiency.

Maturity status link

STW68N60M6-4

Device summary

Order code

Marking

STW68N60M6-4

68N60M6

TO247-4

Tube

Package

Packing

DS12425 - Rev 2 - November 2018

For further information contact your local STMicroelectronics sales office.

www.st.com/Power Transistors

12 3 4 5 6 7...12

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