Datasheet > STW68N60M6-4

STW68N60M6-4

更新时间： 2023-12-20 18:45:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	276K
描述
N沟道600 V、35 mOhm典型值、63 A MDmesh M6功率MOSFET，TO247-4封装

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STW68N60M6-4 数据手册

STW68N60M6-4

Electrical ratings

Table 1. Absolute maximum ratings

Parameter

Symbol

Value

±25

Unit

Gate-source voltage

Drain current (continuous) at T = 25 °C

Drain current (continuous) at T = 100 °C

(1)

Drain current (pulsed)

252

390

Total power dissipation at T = 25 °C

TOT

dv/dt⁽²⁾

dv/dt⁽³⁾

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

V/ns

°C

100

Storage temperature range

stg

-55 to 150

Operating junction temperature range

1. Pulse width is limited by safe operating area.

≤ 63 A, di/dt ≤ 400 A/µs, V

< V

, V = 400 V

(BR)DSS DD

DS(peak)

≤ 480 V

Table 2. Thermal data

Parameter

Symbol

Value

0.32

Unit

thj-case

Thermal resistance junction-case

Thermal resistance junction-ambient

°C/W

thj-amb

Table 3. Avalanche characteristics

Symbol

Parameter

Value

7.5

Unit

Avalanche current, repetitive or not repetitive (pulse width limited by T

)

jmax

Single pulse avalanche energy (starting T = 25 °C, I = I , V = 50 V)

j D AR DD

1100

DS12425 - Rev 2

page 2/12

123 4 5 6 7...12

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