Datasheet > STW65N65DM2AG

STW65N65DM2AG

更新时间： 2024-11-29 14:58:23

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意法半导体 - STMICROELECTRONICS		/
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描述
汽车级N沟道650 V、42 mOhm典型值、60 A MDmesh DM2功率MOSFET，TO-247封装

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STW65N65DM2AG 数据手册

STW65N65DM2AG

Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A

Power MOSFET MDmesh™ DM2 in a TO-247 package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

STW65N65DM2AG

650 V

0.05 Ω

60 A

446 W

•

Designed for automotive applications and

AEC-Q101 qualified

•

Fast-recovery body diode

Extremely low gate charge and input

capacitance

TO-247

•

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications

•

Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STW65N65DM2AG

65N65DM2

TO-247

Tube

August 2015

DocID028164 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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