Datasheet > STGW40M120DF3

STGW40M120DF3

更新时间： 2024-11-26 14:57:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
18页	1030K
描述
1200 V、40 A沟槽栅场截止低损耗M系列IGBT

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技术参数
数据手册

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STGW40M120DF3 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	30 weeks
风险等级：	2.08	最大集电极电流 (IC)：	80 A
集电极-发射极最大电压：	1200 V	门极发射器阈值电压最大值：	7 V
门极-发射极最大电压：	20 V	最高工作温度：	175 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	468 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STGW40M120DF3 数据手册

STGW40M120DF3

STGWA40M120DF3

Trench gate field-stop IGBT, M series

1200 V, 40 A low loss

Datasheet

production data

Features

• 10 µs of short-circuit withstand time

• V_CE(sat)= 1.85 V (typ.) @ I_C= 40 A

• Tight parameters distribution

• Safer paralleling

• Low thermal resistance

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• Soft and fast recovery antiparallel diode

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Applications

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• Industrial drives

• UPS

• Solar

Figure 1.Internal schematic diagram

• Welding

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Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represent an optimum compromise

in performance to maximize the efficiency of

inverter systems where low-loss and short circuit

capability are essential. Furthermore, a positive

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V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

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Table 1. Device summary

Order code

Marking

Package

Packaging

STGW40M120DF3

STGWA40M120DF3

G40M120DF3

TO-247

Tube

TO-247 long leads

November 2014

DocID026224 Rev 3

1/18

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...18

中文翻译

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