Datasheet > STGW40H65FB

STGW40H65FB

更新时间： 2024-11-26 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
20页	449K
描述
650 V、40 A高速沟槽栅场截止HB系列IGBT

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技术参数
数据手册

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STGW40H65FB 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	2.07	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STGW40H65FB 数据手册

STGFW40H65FB, STGW40H65FB,

STGWA40H65FB

Datasheet

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

TO-3PF

TO-247

Minimized tail current

Very low saturation voltage: V_CE(sat)= 1.6 V (typ) @ I_C= 40 A

Safe paralleling

Tight parameter distribution

TO-247 long leads

Low thermal resistance

C(2, TAB)

Applications

•

Welding

G(1)

Power factor correction

UPS

Solar inverters

Chargers

E(3)

G1C2TE3

Description

These devices are IGBTs developed using an advanced proprietary trench gate

field-stop structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGFW40H65FB

STGW40H65FB

STGWA40H65FB

DS9908 - Rev 8 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...20

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