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STD65N55F3 PDF预览

STD65N55F3

更新时间: 2024-11-02 04:00:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
13页 437K
描述
N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET

STD65N55F3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:18 weeks风险等级:1.68
Is Samacsys:N雪崩能效等级(Eas):390 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):65 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD65N55F3 数据手册

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STD65N55F3  
N-channel 55V - 8.0m- 65A - DPAK  
STripFET™ Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
Pw  
STD65N55F3  
55V  
<10.5mΩ  
65A 110W  
Standard threshold drive  
100% avalanche tested  
3
1
DPAK  
Description  
This n-channel enhancement mode Power  
MOSFET is the latest refinement of  
STMicroelectronics' unique “Single Feature  
Size™“ strip-based process, which has  
decreased the critical alignment steps, offering  
remarkable manufacturing reproducibility. The  
outcome is a transistor with extremely high  
packing density for low onresistance, rugged  
avalanche characteristics and low gate charge.  
Internal schematic diagram  
Applications  
Switching application  
– Automotive  
Order code  
Part number  
Marking  
Package  
Packaging  
STD65N55F3  
65N55F3  
DPAK  
Tape & reel  
February 2007  
Rev2  
1/13  
www.st.com  
13  

STD65N55F3 替代型号

型号 品牌 替代类型 描述 数据表
IRFR1018ETRPBF INFINEON

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