5秒后页面跳转
STD6N10T4 PDF预览

STD6N10T4

更新时间: 2024-11-02 20:28:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 169K
描述
6A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3

STD6N10T4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.66Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):20 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL功耗环境最大值:35 W
最大功率耗散 (Abs):35 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON最大开启时间(吨):75 ns
Base Number Matches:1

STD6N10T4 数据手册

 浏览型号STD6N10T4的Datasheet PDF文件第2页浏览型号STD6N10T4的Datasheet PDF文件第3页浏览型号STD6N10T4的Datasheet PDF文件第4页浏览型号STD6N10T4的Datasheet PDF文件第5页浏览型号STD6N10T4的Datasheet PDF文件第6页浏览型号STD6N10T4的Datasheet PDF文件第7页 
STD6N10  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
< 0.45 Ω  
ID  
STD6N10  
100 V  
6 A  
TYPICAL RDS(on) = 0.35 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
3
3
2
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
APPLICATION ORIENTED  
1
1
CHARACTERIZATION  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
100  
V
V
VDG R  
VGS  
100  
± 20  
V
ID  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
6
A
ID  
4
24  
A
IDM()  
Ptot  
A
Total Dissipation at Tc = 25 oC  
35  
W
Derating Factor  
0.23  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
December 1996  

与STD6N10T4相关器件

型号 品牌 获取价格 描述 数据表
STD6N52K3 STMICROELECTRONICS

获取价格

N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP Sup
STD6N60DM2 STMICROELECTRONICS

获取价格

N沟道600 V、0.95 Ohm典型值、5 A MDmesh DM2功率MOSFET,D
STD6N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET,
STD6N62K3 STMICROELECTRONICS

获取价格

N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO
STD6N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET,DPA
STD6N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET,D
STD6N90K5 STMICROELECTRONICS

获取价格

N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET,DP
STD6N95K5 STMICROELECTRONICS

获取价格

N-channel 950 V, 1 Ω typ., 9 A Zener-protect
STD6NC40 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P
STD6NC401 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P