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STD6NC401 PDF预览

STD6NC401

更新时间: 2024-11-02 04:00:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 274K
描述
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh⑩II MOSFET

STD6NC401 数据手册

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STD6NC40  
N-CHANNEL 400V - 0.75- 5A - DPAK / IPAK  
PowerMesh™II MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD6NC40  
400V  
< 1 Ω  
5A  
TYPICAL R (on) = 0.75Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
3
3
2
1
1
DPAK  
IPAK  
ADD SUFFIX “-1” FOR ORDERING IN IPAK  
DESCRIPTION  
The PowerMESHII is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SWITH MODE LOW POWER SUPPLIES  
(SMPS)  
CFL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
400  
GS  
V
Drain-gate Voltage (R = 20 k)  
400  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
±30  
V
I
Drain Current (continuos) at T = 25°C  
5
A
D
C
I
Drain Current (continuos) at T = 100°C  
3
A
D
C
I
( )  
Drain Current (pulsed)  
20  
55  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
0.44  
W/°C  
V/ns  
°C  
°C  
dv/dt(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
3
T
stg  
–65 to 150  
T
Max. Operating Junction Temperature  
150  
j
(1)I 5A, di/dt 100A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
(•)Pulse width limited by safe operating area  
March 2001  
1/9  

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