Datasheet > STD6NC40-T4

STD6NC40-T4

更新时间： 2024-09-27 04:00:23

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意法半导体 - STMICROELECTRONICS		/
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9页	274K
描述
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh⑩II MOSFET

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STD6NC40-T4 数据手册

STD6NC40

N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK

PowerMesh™II MOSFET

TYPE

DSS

DS(on)

STD6NC40

400V

< 1 Ω

■

TYPICAL R (on) = 0.75Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

GATE CHARGE MINIMIZED

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DPAK

IPAK

■

ADD SUFFIX “-1” FOR ORDERING IN IPAK

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITH MODE LOW POWER SUPPLIES

(SMPS)

CFL

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

400

Drain-gate Voltage (R = 20 kΩ)

400

DGR

Gate- source Voltage

±30

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

( )

■

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

Derating Factor

0.44

W/°C

V/ns

°C

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

Max. Operating Junction Temperature

150

(1)I ≤5A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

(•)Pulse width limited by safe operating area

March 2001

1/9

12 3 4 5 6 7...9

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