Datasheet > STD6NF10_08

STD6NF10_08

更新时间： 2024-02-19 15:00:02

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
14页	330K
描述
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET? Power MOSFET

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STD6NF10_08 数据手册

STD6NF10

STU6NF10

N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK

low gate charge STripFET™ Power MOSFET

Features

Type

V_DSS

R_DS(on)max

I_D

STD6NF10

STU6NF10

100 V

< 0.250 Ω

6 A

■ Exceptional dv/dt capability

■ 100% avalanche tested

IPAK

DPAK

Application

■ Switching applications

Description

This Power MOSFET series realized with

Figure 1.

Internal schematic diagram

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC

converters for telecom and computer applications.

It is also intended for any applications with low

gate drive requirements.

Table 1.

Device summary

Order codes

Marking

Package

DPAK

IPAK

Packaging

STD6NF10T4

STU6NF10

D6NF10

6NF10

Tape and reel

Tube

November 2008

Rev 6

1/14

www.st.com

12 3 4 5 6 7...14

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