5秒后页面跳转
STD6N62K3 PDF预览

STD6N62K3

更新时间: 2024-02-19 19:38:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
17页 430K
描述
N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3™ Power MOSFET

STD6N62K3 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.71Is Samacsys:N
其他特性:ULTRA LOW-ON RESISTANCE雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:620 V
最大漏极电流 (Abs) (ID):5.5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):90 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD6N62K3 数据手册

 浏览型号STD6N62K3的Datasheet PDF文件第2页浏览型号STD6N62K3的Datasheet PDF文件第3页浏览型号STD6N62K3的Datasheet PDF文件第4页浏览型号STD6N62K3的Datasheet PDF文件第5页浏览型号STD6N62K3的Datasheet PDF文件第6页浏览型号STD6N62K3的Datasheet PDF文件第7页 
STD6N62K3 - STF6N62K3  
STP6N62K3 - STU6N62K3  
N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FP  
SuperMESH3™ Power MOSFET  
Features  
3
RDS(on)  
max  
3
Type  
VDSS  
ID  
Pw  
2
1
1
DPAK  
STD6N62K3  
STF6N62K3  
STP6N62K3  
STU6N62K3  
620 V  
620 V  
620 V  
620 V  
< 1.28 5.5 A  
< 1.28 5.5 A(1) 25 W  
90 W  
IPAK  
< 1.28 5.5 A  
< 1.28 5.5 A  
90 W  
90 W  
1. Limited by package  
3
3
2
2
1
1
100% avalanche tested  
TO-220FP  
TO-220  
Extremely high dv/dt capability  
Gate charge minimized  
Very low intrinsic capacitances  
Figure 1.  
Internal schematic diagram  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Application  
Switching applications  
Description  
The new SuperMESH3™ series is obtained  
through the combination of a further fine tuning of  
ST's well established strip-based PowerMESH™  
layout with a new optimization of the vertical  
structure. In addition to reducing on-resistance  
significantly versus previous generation, special  
attention has been taken to ensure a very good  
dv/dt capability and higher margin in breakdown  
voltage for the most demanding application.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD6N62K3  
STF6N62K3  
STP6N62K3  
STU6N62K3  
6N62K3  
6N62K3  
6N62K3  
6N62K3  
Tape and reel  
Tube  
TO-220FP  
TO-220  
IPAK  
Tube  
Tube  
May 2008  
Rev 1  
1/17  
www.st.com  
17  

STD6N62K3 替代型号

型号 品牌 替代类型 描述 数据表
FCD5N60TM FAIRCHILD

功能相似

600V N-Channel MOSFET

与STD6N62K3相关器件

型号 品牌 获取价格 描述 数据表
STD6N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET,DPA
STD6N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET,D
STD6N90K5 STMICROELECTRONICS

获取价格

N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET,DP
STD6N95K5 STMICROELECTRONICS

获取价格

N-channel 950 V, 1 Ω typ., 9 A Zener-protect
STD6NC40 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P
STD6NC401 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P
STD6NC40-1 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P
STD6NC40T4 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P
STD6NC40-T4 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK P
STD6NF10 STMICROELECTRONICS

获取价格

N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW