Datasheet > STD6N90K5

STD6N90K5

更新时间： 2023-12-20 18:44:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	666K
描述
N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET，DPAK封装

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STD6N90K5 数据手册

STD6N90K5

Datasheet

N-channel 900 V, 0.91 Ω typ., 6 A MDmesh K5 Power MOSFET

in a DPAK package

Features

TAB

DS(on)

max.

Order code

STD6N90K5

900 V

1.10 Ω

6 A

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

DPAK

D(2, TAB)

100% avalanche tested

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

Description

AM01476v1_tab

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STD6N90K5

Product summary

Order code

STD6N90K5

Marking

Package

Packing

6N90K5

DPAK

Tape and reel

DS11899 - Rev 3 - September 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

中文翻译

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