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STD6N80K5 PDF预览

STD6N80K5

更新时间: 2024-11-03 14:57:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 934K
描述
N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET,DPAK封装

STD6N80K5 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:1.51Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STD6N80K5 数据手册

 浏览型号STD6N80K5的Datasheet PDF文件第2页浏览型号STD6N80K5的Datasheet PDF文件第3页浏览型号STD6N80K5的Datasheet PDF文件第4页浏览型号STD6N80K5的Datasheet PDF文件第5页浏览型号STD6N80K5的Datasheet PDF文件第6页浏览型号STD6N80K5的Datasheet PDF文件第7页 
STB6N80K5  
Datasheet  
N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET  
in a D²PAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
STB6N80K5  
800 V  
1.6 Ω  
4.5 A  
2
1
3
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
D²PAK  
100% avalanche tested  
Zener-protected  
D(2, TAB)  
Applications  
Switching applications  
G(1)  
Description  
This very high voltage N-channel Power MOSFET is designed using MDmesh K5  
technology based on an innovative proprietary vertical structure. The result is a  
dramatic reduction in on-resistance and ultra-low gate charge for applications  
requiring superior power density and high efficiency.  
S(3)  
AM01476v1_tab  
Product status link  
STB6N80K5  
Product summary  
Order code  
STB6N80K5  
Marking  
Package  
Packing  
6N80K5  
D²PAK  
Tape and reel  
DS14335 - Rev 1 - June 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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