Datasheet > STD6N65M2

STD6N65M2

更新时间： 2023-12-20 18:46:04

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
22页	829K
描述
N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET，DPAK封装

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STD6N65M2 数据手册

STB6N65M2, STD6N65M2

Datasheet

N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D²PAK and

DPAK packages

Features

TAB

max.

Order code

STB6N65M2

STD6N65M2

Package

D²PAK

DPAK

DS(on)

650 V

1.35 Ω

4 A

D²PAK

DPAK

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01475V1

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

Product status

STB6N65M2

STD6N65M2

Product summary

Order code

Marking

STB6N65M2

6N65M2

Package

Packing

D²PAK

Tape and reel

STD6N65M2

6N65M2

Order code

Marking

Package

Packing

DPAK

Tape and reel

DS10516 - Rev 2 - December 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...22

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