Datasheet > STD6N60DM2

STD6N60DM2

更新时间： 2023-12-20 18:45:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	510K
描述
N沟道600 V、0.95 Ohm典型值、5 A MDmesh DM2功率MOSFET，DPAK封装

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STD6N60DM2 数据手册

STD6N60DM2

Datasheet

N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a DPAK

package

Features

DS(on)

max.

TOT

Order code

TAB

STD6N60DM2

600 V

1.10 Ω

5 A

60 W

•

Fast-recovery body diode

DPAK

Extremely low gate charge and input capacitance

Low on-resistance

D(2, TAB)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01475V1

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STD6N60DM2

Product summary

Order code

Marking

STD6N60DM2

6N60DM2

DPAK

Package

Packing

Tape and reel

DS12202 - Rev 2 - June 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...19

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