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STD6N52K3 PDF预览

STD6N52K3

更新时间: 2024-01-16 20:32:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
12页 246K
描述
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3? Power MOSFET

STD6N52K3 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.71Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE雪崩能效等级(Eas):110 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:525 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD6N52K3 数据手册

 浏览型号STD6N52K3的Datasheet PDF文件第2页浏览型号STD6N52K3的Datasheet PDF文件第3页浏览型号STD6N52K3的Datasheet PDF文件第4页浏览型号STD6N52K3的Datasheet PDF文件第5页浏览型号STD6N52K3的Datasheet PDF文件第6页浏览型号STD6N52K3的Datasheet PDF文件第7页 
STD6N52K3  
STF6N52K3  
N-channel 525 V, 1 , 5 A, DPAK, TO-220FP  
SuperMESH3™ Power MOSFET  
Preliminary Data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
Pw  
STD6N52K3  
STF6N52K3  
525 V  
525 V  
< 1.2 Ω  
< 1.2 5 A(1) 25 W  
5 A  
70 W  
3
3
2
1
1. Limited by package  
1
DPAK  
TO-220FP  
100% avalanche tested  
Extremely high dv/dt capability  
Gate charge minimized  
Very low intrinsic capacitances  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
The new SuperMESH3™ series is obtained  
through the combination of a further fine tuning of  
ST's well established strip-based PowerMESH™  
layout with a new optimization of the vertical  
structure. In addition to reducing on-resistance  
significantly versus previous generation, special  
attention has been taken to ensure a very good  
dv/dt capability and higher margin in breakdown  
voltage for the most demanding application.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
TO-220FP  
Packaging  
STD6N52K3  
STF6N52K3  
6N52K3  
6N52K3  
Tape and reel  
Tube  
September 2008  
Rev 1  
1/12  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
12  

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