5秒后页面跳转
SI4412DY PDF预览

SI4412DY

更新时间: 2024-11-14 22:33:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 265K
描述
Single N-Channel Logic Level PowerTrench MOSFET

SI4412DY 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOIC-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4412DY 数据手册

 浏览型号SI4412DY的Datasheet PDF文件第2页浏览型号SI4412DY的Datasheet PDF文件第3页 
June 1999  
Si4412DY*  
â
Single N-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• 7 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V  
RDS(ON) = 0.042 @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
• High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
• High power and current handling capability.  
• Battery switch  
• Load switch  
• Motor controls  
'
'
'
'
*
6
6
62ꢀꢁ  
6
$EVROXWHꢀ0D[LPXPꢀ5DWLQJVꢀꢀ  
6\PERO  
3DUDPHWHU  
5DWLQJV  
8QLWV  
±
°
7KHUPDOꢀ&KDUDFWHULVWLFV  
θ
°
°
θ
3DFNDJHꢀ2XWOLQHVꢀDQGꢀ2UGHULQJꢀ,QIRUPDWLRQ  
'HYLFHꢀ0DUNLQJ  
'HYLFH  
5HHOꢀ6L]H  
7DSHꢀ:LGWK  
4XDQWLW\  
ꢀꢀꢀꢀꢁꢀ  
1999 Fairchild Semiconductor Corporation  
Si4412DY Rev. A  

SI4412DY 替代型号

型号 品牌 替代类型 描述 数据表
NDS9410A FAIRCHILD

功能相似

Single N-Channel Enhancement Mode Field Effect Transistor
FDS6630A FAIRCHILD

功能相似

N-Channel Logic Level PowerTrenchTM MOSFET
FDS6612A FAIRCHILD

功能相似

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

与SI4412DY相关器件

型号 品牌 获取价格 描述 数据表
SI4412DYD84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
SI4412DY-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4412DYF011 FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
SI4412DYL99Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
SI4412DY-NL FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4412DYS62Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
SI4412DY-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
SI4412DY-T1-E3 VISHAY

获取价格

N-Channel 30-V (D-S) Rated MOSFET
Si4413ADY VISHAY

获取价格

P-Channel 30-V (D-S) MOSFET
SI4413ADY_RC VISHAY

获取价格

R-C Thermal Model Parameters