Datasheet > SI4412DY-NL

SI4412DY-NL

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	437K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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SI4412DY-NL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2.5 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

SI4412DY-NL 数据手册

June 1999

Si4412DY*

Single N-Channel Logic Level PowerTrench MOSFET

General Description

Features

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

7 A, 30 V. R_DS(ON)= 0.028 Ω @ V_GS= 10 V

R_DS(ON)= 0.042 Ω @ V_GS= 4.5 V

Low gate charge.

Fast switching speed.

This device is well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

High performance trench technology for extremely

low R_DS(ON)

Applications

High power and current handling capability.

Battery switch

Load switch

Motor controls

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1999 Fairchild Semiconductor Corporation

Si4412DY Rev. A

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中文翻译

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