Datasheet > SI4420BDY_06

SI4420BDY_06

更新时间： 2024-01-28 21:01:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	104K
描述
N-Channel 30-V (D-S) MOSFET

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SI4420BDY_06 数据手册

Si4420BDY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

13.5

•

100 % R_gTested

Pb-free

0.0085 at V_GS= 10 V

0.0110 at V_GS= 4.5 V

RoHS

COMPLIANT

SO-8

Top View

Si4420BDY-T1-E3 (Lead (Pb)-free)

Ordering Information:

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 sec

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

13.5

10.8

9.5

7.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Single Pulse Avalanche Current

Avalanche Energy

2.3

1.26

I_AS

E_AS

L = 0.1 mH

T_A= 25 °C

T_A= 70 °C

2.5

1.6

1.4

0.9

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t < 10 sec

Steady State

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

°C/W

R_thJF

Notes:

a. Surface Mounted on FR4 Board, t ≤ 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

Document Number: 73067

S-61013-Rev. B, 12-Jun-06

www.vishay.com

12 3 4 5 6

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