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SI4420DYS62Z PDF预览

SI4420DYS62Z

更新时间: 2024-11-15 18:40:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
3页 281K
描述
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4420DYS62Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):12.5 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4420DYS62Z 数据手册

 浏览型号SI4420DYS62Z的Datasheet PDF文件第2页浏览型号SI4420DYS62Z的Datasheet PDF文件第3页 
January 2000  
Si4420DY*  
â
Single N-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V  
RDS(ON) = 0.013 W @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
• High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
• High power and current handling capability.  
• Battery switch  
• Load switch  
• Motor controls  
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ã1999 Fairchild Semiconductor Corporation  
Si4420DY Rev. B  

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