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SI4425BDY-T1-E3 PDF预览

SI4425BDY-T1-E3

更新时间: 2024-02-29 20:58:00
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 95K
描述
P-Channel 30-V (D-S) MOSFET

SI4425BDY-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.07Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:184124
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:8-Pin Narrow SOIC
Samacsys Released Date:2015-04-13 16:59:08Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.8 A最大漏极电流 (ID):8.8 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:20
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4425BDY-T1-E3 数据手册

 浏览型号SI4425BDY-T1-E3的Datasheet PDF文件第2页浏览型号SI4425BDY-T1-E3的Datasheet PDF文件第3页浏览型号SI4425BDY-T1-E3的Datasheet PDF文件第4页浏览型号SI4425BDY-T1-E3的Datasheet PDF文件第5页浏览型号SI4425BDY-T1-E3的Datasheet PDF文件第6页 
Si4425BDY  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Advanced High Cell Density  
VDS (V)  
rDS(on) (W)  
ID (A)  
Process  
Pb-free  
Available  
0.012 @ V = 10 V  
11.4  
9.1  
GS  
APPLICATIONS  
30  
0.019 @ V = 4.5  
V
GS  
D Load Switches  
Notebook PCs  
Desktop PCs  
S
SO-8  
S
1
D
D
D
D
G
8
7
6
5
S
S
2
3
4
G
D
Top View  
Ordering Information: Si4425BDY  
P-Channel MOSFET  
Si4425BDY—T1 (with Tape and Reel)  
Si4425BDY—E3 (Lead (Pb)-Free)  
Si4425BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
8.8  
7.0  
11.4  
9.1  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
50  
a
continuous Source Current (Diode Conduction)  
I
2.1  
2.5  
1.3  
1.5  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.6  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
40  
70  
15  
50  
85  
18  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72000  
S-50366—Rev. D, 28-Feb-05  
www.vishay.com  
1

SI4425BDY-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI4425DDY-T1-GE3 VISHAY

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TRANSISTOR 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMP
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