是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 9.4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4429EDY-T1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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SI4429EDY-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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SI4430 | SILICON |
获取价格 |
Silicon Laboratonies SI4432/31/30 highly-integrated, single chip wireless ISM transceiver |
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SI4430-B1 | SILICON |
获取价格 |
Si4430/31/32 ISM TRANSCEIVER |
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SI4430-B1-FM | SILICON |
获取价格 |
Si4430/31/32 ISM TRANSCEIVER |
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SI4430-B1-FMR | SILICON |
获取价格 |
Telecom Circuit, 1-Func, QFN-20 |
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SI4430BDY | VISHAY |
获取价格 |
N-Channel, 30-V (D-S) MOSFET |
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SI4430BDY-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
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SI4430BDY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
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SI4430DY | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET |
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