SI4431

更新时间： 2024-09-12 22:43:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	98K
描述
P-Channel Logic Level PowerTrench MOSFET

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中文翻译

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数据手册

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SI4431 数据手册

January 2001

Si4431DY

P-Channel Logic Level PowerTrench MOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

• –6.3 A, –30 V. R_DS(ON)= 0.032 Ω @ V_GS= -10 V

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain

superior switching performance.

_DS(ON)= 0.05 Ω @ V_GS= -4.5 V

• Low gate charge

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

• Fast switching speed

• High performance trench technology for extremely

Applications

low R_DS(ON)

• DC/DC converter

• Load switch

• High power and current handling capability

• Motor Drive

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–30

Units

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

-6.3

-40

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

4431

Si4431DY

13’’

12mm

2500 units

Si4431DY Rev A

2001 Fairchild Semiconductor International

12 3 4 5

中文翻译

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