Datasheet > SI4433DYT1

SI4433DYT1

更新时间： 2024-09-16 06:06:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	60K
描述
TRANSISTOR 2900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOP-8, FET General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI4433DYT1 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	SOT
包装说明：	SOP-8	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

SI4433DYT1 数据手册

Si4433DY

Vishay Siliconix

P-Channel 1.8-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D Fast Switching

D 100% R_gTested

0.110 @ V = −4.5 V

−3.9

−3.2

−2.6

−20

0.160 @ V = −2.5 V

APPLICATION

0.240 @ V = −1.8 V

D DC-DC Conversion

D Asynchronous Buck Converter

D Voltage Inverter

SO-8

Top View

Ordering Information: Si4433DY

Si4433DY-—E3 (Lead (Free)

P-Channel MOSFET

Si4433DYT1 (with Tape and Reel)

Si4433DY-T1—E3 (Lead Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

= 25_C

= 85_C

−2.9

−2.1

−3.9

−2.8

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−10

Continuous Source Current (Diode Conduction)

−2.1

2.5

−1.2

1.4

= 25_C

= 85_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71663

S-40932—Rev. C, 17-May-04

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SI4433DYT1相关器件

型号	品牌	获取价格	描述	数据表
Si4434ADY	VISHAY	获取价格	N-Channel 250 V (D-S) MOSFET
SI4434DY	VISHAY	获取价格	N-Channel 250-V (D-S) MOSFET
SI4434DY_05	VISHAY	获取价格	N-Channel 250-V (D-S) MOSFET
SI4434DY-E3	VISHAY	获取价格	N-Channel 250-V (D-S) MOSFET
SI4434DY-RC	VISHAY	获取价格	R-C Thermal Model Parameters
SI4434DY-T1-E3	VISHAY	获取价格	N-Channel 250-V (D-S) MOSFET
SI4434DY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2.1A I(D), 250V, 1-Element, N-Channel, Silicon, Meta
SI4435BDY	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI4435BDY_1	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI4435BDY-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o