5秒后页面跳转
SI4431DY-T1 PDF预览

SI4431DY-T1

更新时间: 2024-09-13 12:14:51
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 81K
描述
P-Channel 30-V (D-S) MOSFET

SI4431DY-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.05
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):5.8 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:P-CHANNEL功耗环境最大值:2.5 W
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

SI4431DY-T1 数据手册

 浏览型号SI4431DY-T1的Datasheet PDF文件第2页浏览型号SI4431DY-T1的Datasheet PDF文件第3页浏览型号SI4431DY-T1的Datasheet PDF文件第4页浏览型号SI4431DY-T1的Datasheet PDF文件第5页 
Si4431DY  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
V
(V)  
r
(W)  
I (A)  
D
DS  
DS(on)  
D 100% UIS Tested  
0.040 @ V = –10 V  
GS  
"5.8  
"4.5  
–30  
0.070 @ V = –4.5 V  
GS  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
D
Ordering Information: Si4431DY-T1  
Si4431DY-T1—E3 (Lead (Pb)-Free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
–30  
DS  
V
"20  
"5.8  
"4.6  
GS  
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
Pulsed Drain Current  
I
"30  
–2.3  
A
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
Avalanche Current  
I
AS  
20  
L = 0.1 mH  
Single-Pulse Avalanche Energy  
E
AS  
20  
mJ  
T
= 25_C  
= 70_C  
2.5  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
50  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm  
Document Number: 70151  
S-51455—Rev. D, 01-Aug-05  
www.vishay.com  
1

与SI4431DY-T1相关器件

型号 品牌 获取价格 描述 数据表
SI4432 SILICON

获取价格

Silicon Laboratonies SI4432/31/30 highly-integrated, single chip wireless ISM transceiver
SI4432 IBM

获取价格

中辉电子商行主营业务: 主营: 直插八脚  光耦 DIP  SOP 二三极管 场效应等,
SI4432-B1 SILICON

获取价格

Si4430/31/32 ISM TRANSCEIVER
SI4432-B1-FM SILICON

获取价格

Si4430/31/32 ISM TRANSCEIVER
Si4432-B1-ZM1 SILICON

获取价格

Updated pin 6, ANT1 to ANT
Si4432-B1-ZM2 SILICON

获取价格

Updated pin 6, ANT1 to ANT
SI4433DY VISHAY

获取价格

P-Channel 1.8-V (G-S) MOSFET
SI4433DY-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SI4433DYT1 VISHAY

获取价格

TRANSISTOR 2900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOP-8, FET General Purpose
Si4434ADY VISHAY

获取价格

N-Channel 250 V (D-S) MOSFET