Datasheet > SI4435DY

SI4435DY

更新时间： 2024-11-06 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	416K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-8A;Vgs(th)(V):±20;漏源导通电阻:12mΩ@-10V

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SI4435DY 数据手册

UMW

SI4435

-30V P-Channel MOSFET

Description

The SOP-8 has been modified through a customized

leadframe for enhanced thermal characteristics

and multiple-die capability making it ideal in a variety

of power applications.With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infrared, or wave soldering

technique

SOP-8

Features

•

VDS (V) =-30V

ID= -8A

RDS(ON) ＜ 20m

•

(V = -10V)

Ω(V

=-10V)

RDS(ON) ＜ 35 m

•

Ω(V

=-4.5V)

Absolute Maximum Ratings

Parameter

Max.

-30

Units

V_DS

Drain- Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-8.0

-6.4

-50

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

± 20

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

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