SI4435DY

更新时间： 2024-11-04 22:43:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	84K
描述
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

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中文翻译

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数据手册
替代型号

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SI4435DY 数据手册

PD- 93768A

Si4435DY

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

V_DSS= -30V

l Available in Tape & Reel

R_DS(on)= 0.020Ω

Top View

Description

These P-channel HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance per

silicon area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-30

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-8.0

-6.4

-50

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 20

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

10/14/99

12 3 4 5 6 7 8

中文翻译

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SI4435DY 替代型号

型号	品牌	替代类型	描述	数据表
SI4435DYTRPBF	INFINEON	类似代替	Power Field-Effect Transistor,
SI4435DYPBF	INFINEON	类似代替	HEXFET Power MOSFET

与SI4435DY相关器件

型号	品牌	获取价格	描述	数据表
SI4435DY (KI4435DY)	KEXIN	获取价格	P-Channel MOSFET
SI4435DY_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
SI4435DYPBF	INFINEON	获取价格	HEXFET Power MOSFET
SI4435DY-REVA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
SI4435DY-T1-A-E3	VISHAY	获取价格	Transistor
SI4435DY-T1-REVA	VISHAY	获取价格	Transistor,
SI4435DYTRPBF	INFINEON	获取价格	Power Field-Effect Transistor,
Si4435FDY	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI4435FDY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI4436DY	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET